Fig. 24
From: Conductance Quantization in Resistive Random Access Memory
Equivalent circuit model for ECM device [195]. a Equivalent circuit model for an ECM cell including a nanobattery V emf with an external circuit. R i is the total resistance of the ionic current path. R ext is the external resistance, e.g., from the neighboring cells in an array or a sense amplifier. b SPICE simulation results showing a staircase-like change of the cell conductance resulted from the discharging of V emf. c Evolution of the conductance of a Ag/SiO2/Pt cell in crossbar structure under a negative cell current I cell. Reproduced with permission