Table 2 Different material systems showing conductance quantization effect
From: Conductance Quantization in Resistive Random Access Memory
System | RS mechanism | CF | Quantization level | RS polarity | QC observed in SET or RESET |
|---|---|---|---|---|---|
Ag2S or Cu2S (vacuum gap) [169] | ECM | Ag | G 0 | Bipolar | SET |
Ag/AgI/Pt [180] | ECM | Ag | G 0 | Bipolar | SET |
ECM | Ag | 0.5 G 0 | Bipolar | SET | |
Ag/Ta2O5/Pt [181] | ECM | Ag | G 0 | Bipolar | SET and RESET |
Ag/Ag2S/Pt (STM tip) [182] | ECM | Ag | G 0 | Bipolar | RESET |
Ag/P3HT:PCBM/ITO [183] | ECM | Ag | G 0/0.5 G 0 | Bipolar | SET and RESET |
Ag/a-La1-xSrxMnO3/Pt [185] | ECM | Ag | G 0 | Bipolar | SET |
Ag/ionic conductor-layer/W tip [191] | ECM | Ag | G 0 | Bipolar | SET |
Ag/GeS2/W [193] | ECM | Ag | G 0 | Bipolar | SET |
Cr/p+-amorphous silicon/V [192] | ECM | Metal | 0.5 G 0 | Unipolar | SET |
Nb/ZnOx/Pt [170] | ECM | Nb or Vo | G 0/0.5 G 0 | Bipolar | SET and RESET |
Cu/HfOX/Pt [190] | ECM | Cu | 0.5 G 0 | Bipolar | SET |
Pt/HfO2/Pt [69] | VCM | Vo | 0.5 G 0 | Unipolar | RESET |
ITO/ZnOx/ITO [170] | VCM | Vo | 0.5 G 0 | Unipolar | SET and RESET |
Ti (Ta, W)/Ta2O5/Pt [171] | VCM | Vo | G 0 | Bipolar | SET and RESET |
V/V2O5/V [174] | - | - | 0.5 G 0 | - | SET |
W/CeOx/SiO2/NiSi2 [179] | VCM | Vo | 0.5 G 0 | Bipolar | RESET |
n-Si/SiOx/p-Si [186] | VCM | Vo | G 0/0.5 G 0 | Bipolar and Unipolar | SET |
Ti/HfO2/TiN [188] | VCM | Vo | G 0 | Bipolar | RESET |
Ti/TiO2/SrTiO3/n-Si [194] | VCM | Vo | G 0 | Bipolar | SET |