Fig. 6From: Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin FilmRepresentative endurance performance of the (a) Ge0.5Sb1.0Te8.5, (b) Ge2.4Sb2.0Te5.6, (c) Ge3.5Sb1.0Te5.5 and (d) Ge5.0Sb3.5Te1.5 vertical memory cellsBack to article page