Fig. 3
From: Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
Schematic of the processing steps. a Encapsulated NWs with a metal contact to p-doped GaN shells and a PDMS cap layer before peeling. b Final device consisting of a flipped membrane with a transparent ITO contact to n-doped GaN NW base parts and top metal contact pads. The PDMS cap is partially released, and aluminium foil is attached to the bottom metal contact