Fig. 4From: Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers a I-V characteristics of InN-based MIS structures with different Mg source temperatures. b Ohmic behavior between InN films and In electrodes. c F-N tunneling as well as d Schottky emission plots of the leakage currents versus different Mg source temperaturesBack to article page