Fig. 1
Approach to modeling of Si nanowires. a The geometry of gate-all-around Si nanowires. Long channels are represented by supercells with a periodic boundary condition along transport directions. 1.0-nm-thick oxide layer is assumed for all the simulated nanowires. b The process of Schrödinger-Poisson simulations. A 2D k · p Schrödinger and a 2D Poisson equation are solved self-consistently to get bandstructures and electrostatics under gate biases. c The process for evaluation of the carrier mobility. The velocity of a single carrier is calculated by solving a 1D Boltzmann transport equation with Monte Carlo approach, including scattering induced by the acoustic/non-polar optical phonons and channel surface roughness. The carrier mobility is then evaluated with the velocity that is ensemble-averaged for 3 × 105 carriers