Fig. 4
From: X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires
Calculated \( \left(20\overline{2}5\right) \) RSMs of coherently strained, graded Al x Ga1 − x N films using the depth profiles of the out-of-plane lattice parameters shown in a where the blue line represents pseudomorphic growth and the red line partially relaxed growth. Pseudomorphic and partially relaxed growths on [0001]-oriented GaN substrates are simulated in b and c, respectively. The gray dashed lines indicate the position of pseudomorphic and fully relaxed growth