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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: Indium Antimonide Nanowires: Synthesis and Properties

Fig. 6

The 30° tilted SEM images of an InSb NW array. a Low-magnification image of a 25 × 25 NW array with a yield of over 95 % grown using optimized parameters for 50-nm droplets: pitch = 500 nm and V/III = 26.4. Scale bar corresponds to 1 μm. b High magnification image of a single NW. Color indicates the stacking of materials: InP (blue), InAs (yellow), and InSb (red). The arrow shows the zone in which the InAs stem evaporates. Scale bar corresponds to 200 nm. See ref. [10]

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