Fig. 5
From: Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
(color online) Typical CL mappings at T = 5 K from a bundle of dispersed nanowires on Si, spectrally filtered at the indicated energies of (a) 1.508 ± 0.005 eV (top), where a relatively uniform emission attributed to the GaAs core is observed along the nanowire, and (b) 1.475 ± 0.005 eV (bottom) where strong emission from InGaAs is obtained at the nanowire tip. The scale bar is 1 μm