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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Modeling of Noise and Resistance of Semimetal Hg1-xCdxTe Quantum Well used as a Channel for THz Hot-Electron Bolometer

Fig. 5

Dependence of the generation-recombination noise on incident radiation frequency. Dependence of the generation-recombination noise in QW of 20 nm width and molar composition x = 0.06 on incident radiation frequency, f. I c  = 0.4 mA. Calculations are made for three electron concentrations: (1) 7 * 1016 (dotted line), (2) 1.1 * 1017 (dashed line), and (3) 1.5 * 1017 cm−3 (solid line)

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