Fig. 5
Dependence of the generation-recombination noise on incident radiation frequency. Dependence of the generation-recombination noise in QW of 20 nm width and molar composition x = 0.06 on incident radiation frequency, f. I c = 0.4 mA. Calculations are made for three electron concentrations: (1) 7 * 1016 (dotted line), (2) 1.1 * 1017 (dashed line), and (3) 1.5 * 1017 cm−3 (solid line)