Table 1 Comparison of the various nanostructured template-based nanocapacitors, including the capacitor structure, material, and fabrication method, capacitance density, and leakage current density. Here, FA and RA represent the extracted leakage current density according to the footprint area and real electrode area, respectively, and the extracted capacitance density means the equivalent planar capacitance density (EPCD). BE and TE are abbreviations of the bottom electrode and top electrode, respectively
Reference | Template | Film deposition | BE | Insulator (thickness) | TE | EPCD (frequency) | Leakage current density |
|---|---|---|---|---|---|---|---|
Our work | ZnO NWs | ALD | AZO | Al2O3 (5 nm) | AZO | 92 fF/μm2 (1 kHz) | 3.4 × 10−8 A/cm2 at 2 V (FA) |
6 × 10−9 A/cm2 at 2 V (RA) | |||||||
Banerjee et al. [5] | AAO | ALD | TiN | Al2O3 (6.7 nm) | TiN | 1 pF/μm2 (20 Hz and d.c.) | 5.0 × 10−9 A/cm2 at 2 V (RA) |
Klootwijk et al. [14] | Si trench | ALD | TiN | Al2O3 (10 nm) | TiN | 440 fF/μm2 (10 kHz) | 0.1~1 × 10−5 A/cm2 at 2 V (FA) |
Morel et al. [12] | Si nanowires | CVD/ALD | Si | Al2O3 (10 nm) | TiN | 180 fF/μm2 (1 kHz) | 1.8 × 10−7 A/cm2 at 1 V (RA) |
4.0 × 10−6 A/cm2 at 1 V (FA) | |||||||
Chang et al. [15] | Si nanopillar | PVD | N+-Si | SiO2 (5 nm) | Ni | 43 fF/μm2 (1 kHz) | 1.15 × 10−5 A/cm2 at 2 V (FA) |
Zhang et al. [8] | AAO | ALD | AZO | Al2O3 (10 nm) | AZO | 37 fF/μm2 (10 kHz) | 1.7 × 10−7 A/cm2 at 1 V (FA) |
Kemell et al. [16] | Si trench | ALD | Si | Al2O3 (50 nm) | AZO | 2~25 fF/μm2 (10 kHz) | 3 × 10−5 A/cm2 at 2.5 V (RA) |
1.5 × 10−3 A/cm2 at 2.5 V (FA) | |||||||
Li et al. [9] | AAO | ALD | AZO | Al2O3 (10 nm) | AZO | 15.3 fF/μm2 (100 kHz) | Not satisfactory (no data) |
Jang et al. [10] | CNT | PECVD | CNT/Nb | Si3N4 (65 nm) | Al | 6.3 fF/μm2 (not given) | 2 × 10−6 A/cm2 at 1 V (RA) |
Sohn et al. [6] | AAO | CVD | Al | Al2O3 (27 nm) | CNT | 1.74 fF/μm2 (100 kHz) | No data |