Skip to main content

Advertisement

Table 1 Comparison of the various nanostructured template-based nanocapacitors, including the capacitor structure, material, and fabrication method, capacitance density, and leakage current density. Here, FA and RA represent the extracted leakage current density according to the footprint area and real electrode area, respectively, and the extracted capacitance density means the equivalent planar capacitance density (EPCD). BE and TE are abbreviations of the bottom electrode and top electrode, respectively

From: Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage

Reference Template Film deposition BE Insulator (thickness) TE EPCD (frequency) Leakage current density
Our work ZnO NWs ALD AZO Al2O3 (5 nm) AZO 92 fF/μm2 (1 kHz) 3.4 × 10−8 A/cm2 at 2 V (FA)
6 × 10−9 A/cm2 at 2 V (RA)
Banerjee et al. [5] AAO ALD TiN Al2O3 (6.7 nm) TiN 1 pF/μm2 (20 Hz and d.c.) 5.0 × 10−9 A/cm2 at 2 V (RA)
Klootwijk et al. [14] Si trench ALD TiN Al2O3 (10 nm) TiN 440 fF/μm2 (10 kHz) 0.1~1 × 10−5 A/cm2 at 2 V (FA)
Morel et al. [12] Si nanowires CVD/ALD Si Al2O3 (10 nm) TiN 180 fF/μm2 (1 kHz) 1.8 × 10−7 A/cm2 at 1 V (RA)
4.0 × 10−6 A/cm2 at 1 V (FA)
Chang et al. [15] Si nanopillar PVD N+-Si SiO2 (5 nm) Ni 43 fF/μm2 (1 kHz) 1.15 × 10−5 A/cm2 at 2 V (FA)
Zhang et al. [8] AAO ALD AZO Al2O3 (10 nm) AZO 37 fF/μm2 (10 kHz) 1.7 × 10−7 A/cm2 at 1 V (FA)
Kemell et al. [16] Si trench ALD Si Al2O3 (50 nm) AZO 2~25 fF/μm2 (10 kHz) 3 × 10−5 A/cm2 at 2.5 V (RA)
1.5 × 10−3 A/cm2 at 2.5 V (FA)
Li et al. [9] AAO ALD AZO Al2O3 (10 nm) AZO 15.3 fF/μm2 (100 kHz) Not satisfactory (no data)
Jang et al. [10] CNT PECVD CNT/Nb Si3N4 (65 nm) Al 6.3 fF/μm2 (not given) 2 × 10−6 A/cm2 at 1 V (RA)
Sohn et al. [6] AAO CVD Al Al2O3 (27 nm) CNT 1.74 fF/μm2 (100 kHz) No data