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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Fig. 2

a SEM image (45° tilted angle view) of InSb nanowires grown with an InSb powder source placed at the tube furnace center and an Au nanoparticle-coated Si/SiO2 substrate at 12 cm away from the source by heating the source at 550 °C for 1 h and then letting the system cool down naturally to room temperature. b HRTEM image of a segment of an as-grown InSb nanowire. The diameter of the nanowire is ~25 nm and the nanowire has a zincblende crystal structure. The upper right inset shows a low-magnification TEM image of the nanowire. The red square in the inset indicates the segment of the nanowire with the HRTEM image shown in the main panel. The lower left inset shows the FFT pattern corresponding to the HRTEM image shown in the main panel. c EDX spectrum of the nanowire. The ratio of In:Sb in the nanowire is close to 1:1. d HRTEM image of a 10-nm-diameter nanowire grown using the same approach as above except for setting the heating at a temperature of 580 °C for 10 min. The inset is a low-magnification TEM image of the nanowire

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