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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Fig. 5

a SEM image of a FET device made from an InSb nanowire grown in this work. The inset is a schematic view of the device. b Output characteristics of an 80-nm-diameter InSb nanowire FET device measured at different gate voltages at room temperature. c Transfer characteristics of the nanowire FET device measured at different source-drain voltages at room temperature. d Transfer characteristics of a 40-nm-diameter InSb nanowire FET device measured at different source-drain voltages at room temperature

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