Fig. 5

a SEM image of a FET device made from an InSb nanowire grown in this work. The inset is a schematic view of the device. b Output characteristics of an 80-nm-diameter InSb nanowire FET device measured at different gate voltages at room temperature. c Transfer characteristics of the nanowire FET device measured at different source-drain voltages at room temperature. d Transfer characteristics of a 40-nm-diameter InSb nanowire FET device measured at different source-drain voltages at room temperature