Fig. 5

EQE spectra and I-V characteristics. a EQE spectra and (b) I-V characteristics of the front-opening crescent a-Si:H SNSCs with D = 200 nm. The device schematic and the tabulated electrical parameters are inserted in (a) and (b), respectively
EQE spectra and I-V characteristics. a EQE spectra and (b) I-V characteristics of the front-opening crescent a-Si:H SNSCs with D = 200 nm. The device schematic and the tabulated electrical parameters are inserted in (a) and (b), respectively