Table 2 Structural parameters for SL layers and GaN substrate obtained from HRXRD data for the different samples investigated
Sample | RSM \( \left(11\overline{2}4\right) \) | ω/2θ (0002) | ω (0002) | ||||
|---|---|---|---|---|---|---|---|
a (nm) | R GaN (%) | R AlN (%) | T SL (nm) | t GaN/t AlN (nm) | Δω (arcsec) | N screw (×108 cm2) | |
S5 | 0.3183 ± 0.0001 | 92 | 8 | 9.9 ± 0.15 | 4.9/5 | 477.6 | 4.58 |
S10 | 0.3177 ± 0.0001 | 83 | 17 | 9.7 ± 0.20 | 4.8/4.9 | 843.2 | 14.3 |
S20 | 0.3158 ± 0.0001 | 59 | 41 | 9.45 ± 0.05 | 4.35/5.1 | 406.4 | 3.32 |
GaNtempl. | 0.31878 ± 0.00002 | 99.95 | 238.9 | 1.12 | |||