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Table 2 Structural parameters for SL layers and GaN substrate obtained from HRXRD data for the different samples investigated

From: The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Sample RSM \( \left(11\overline{2}4\right) \) ω/2θ (0002) ω (0002)
a (nm) R GaN (%) R AlN (%) T SL (nm) t GaN/t AlN (nm) Δω (arcsec) N screw (×108 cm2)
S5 0.3183 ± 0.0001 92 8 9.9 ± 0.15 4.9/5 477.6 4.58
S10 0.3177 ± 0.0001 83 17 9.7 ± 0.20 4.8/4.9 843.2 14.3
S20 0.3158 ± 0.0001 59 41 9.45 ± 0.05 4.35/5.1 406.4 3.32
GaNtempl. 0.31878 ± 0.00002 99.95     238.9 1.12