Fig. 1From: Polarization memory effect in the photoluminescence of nc-Si−SiOx light-emitting structuresPL spectra of porous nc-Si−SiOx sample annealed in vacuum, then treated in 0.5 % HF solution for 5 (a), 10 (b), and 17 (c) min. The spectra were measured for parallel orientation of the analyzer to polarization of the exciting radiation, and polarization of the exciting light is oriented parallel to the projection of the inclined SiOx nanocolumns on the sample planeBack to article page