Fig. 6From: Simulation and Experimental Study on Anti-reflection Characteristics of Nano-patterned Si Structures for Si Quantum Dot-Based Light-Emitting Devices a Room temperature photoluminescence of Si QDs/SiO2 multilayers on flat and nano-patterned substrates under the excitation of He–Cd laser (325 nm). b Integrated PL intensity of samples. c Reflectance at 820 nm of different samplesBack to article page