Fig. 3From: Metal-Semiconductor-Metal Near-Ultraviolet (~380 nm) Photodetectors by Selective Area Growth of ZnO Nanorods and SiO2 PassivationActive channel width-dependent device performance and spectral responsivity. a I-V curves of the ZnO NR-based NUV PDs grown at 25 mM with different W ch, b optical absorption spectra of the AZO thin films with/without ZnO NRs grown at 25 mM, and c spectral responsivity of the ZnO NR-based NUV PD grown at 25 mM with the W ch of 30 μm. The inset of a shows the on/off ratio along the W ch. The inset of b shows the plot of (αhν)2 versus photon energy for the AZO thin films with/without ZnO NRs grown at 25 mM. The inset of c shows the EQE of the ZnO NR-based NUV PD grown at 25 mM with the W ch of 30 μmBack to article page