Fig. 4From: Metal-Semiconductor-Metal Near-Ultraviolet (~380 nm) Photodetectors by Selective Area Growth of ZnO Nanorods and SiO2 PassivationPhotoresponse characteristics and SiO2 passivation effect. a Photoresponse characteristics of the ZnO NR-based NUV PD grown at 25 mM with the W ch of 30 μm at different biases and b SiO2 passivation effect on the photoresponse property of the ZnO NR-based NUV PD grown at 25 mM with the W ch of 30 μmBack to article page