Fig. 16
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
a Schematic of a Pt/ZnO1 − x NRs/ZnO TF/Pt resistive switching device. b Corresponding SEM image of a well-aligned ZnO1 − X NR with a length of ∼150 nm grown on the ZnO film with a thickness of ∼100 nm. c Schematic of confined recovery and rupture of conducting filaments by ZnO1 − x NRs [256]