Fig. 7
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
a Switching voltage variation of the Al/ZnO/Al structure ReRAM device a with ZnO film thickness [130], (b) forming, set, and reset voltages as a function of film thickness for Cu/ZnO/n+-Si device. Each data point was extracted from five devices. The inset of (b) is the thickness dependence on occurrence probability of the initially ON state for as-deposited ZnO. The occurrence probabilities were collected from 25 devices for each point [131]