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Fig. 7 | Nanoscale Research Letters

Fig. 7

From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Fig. 7

a Switching voltage variation of the Al/ZnO/Al structure ReRAM device a with ZnO film thickness [130], (b) forming, set, and reset voltages as a function of film thickness for Cu/ZnO/n+-Si device. Each data point was extracted from five devices. The inset of (b) is the thickness dependence on occurrence probability of the initially ON state for as-deposited ZnO. The occurrence probabilities were collected from 25 devices for each point [131]

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