Fig. 9
From: Status and Prospects of ZnO-Based Resistive Switching Memory Devices
a Typical complementary switching of TiN/MgZnO/ZnO/Pt bipolar memory device. Inset shows I-V curve of one typical switching process plotted in semilogarithmic scale [153]. b I-V behaviors of cell A (Pt/ZnO/ZnWOx/W) and c cell B (W/ZnWOx/ZnO/Pt). Inset shows the corresponding device configuration. d I-V sweeps of the ZnO/ZnWOx//ZnWOx/ZnOCRS device. Inset shows the device configuration and the corresponding resistive switching for two cells. All the thickness of ZnWOx layer is ∼15 nm [154]