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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure

Fig. 3

Dependency of M-H curves on the p-MTJ spin valve structure and ex situ annealing temperature. M-H curves in figures describe the static perpendicular magnetization behaviors of Co2Fe6B2 free layer (a), Co2Fe6B2 pinned layer (b), lower SyAF layer (c), and upper SyAF layer (d). M-H curves in the inlets of figures only correspond to the static i-PMA behavior of Co2Fe6B2 free layer, where the black M-H curves represent i-PMA behavior and the red M-H curves represent the in-plane behavior. a p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 350 °C, b p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer ex situ annealed at 350 °C, c p-MTJ spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, and d p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer ex situ annealed at 400 °C

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