Fig. 6
From: Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs
Calculated time-dependent a Al adatom density n Al, b As adatom density n As, and c droplet volume V D . The process parameters are T=605 °C, N D =4.8×108, and varied F As and n As(0) as indicated. F Al=0.4 ML/s for t<t G =2.5 s (growth) and F Al=0 for t>t G (annealing). The As flux F As in ML/s and the initial As adatom density n As(0) in ML are varied as indicated