Fig. 3From: Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness a EL spectra of the LSP-enhanced ZnO QD/MgO/p-GaN LED under different forward injection currents. b The injection current dependence of the EL enhancement ration for the LED. The inset shows EL spectra of the n-ZnO QD/MgO/p-GaN heterojunction LEDs with and without Ag-NPs under an injection current of 0.7 mA. c Peak deconvolution of the EL spectra with Gaussian functions obtained at the injection current of 0.7 mA. d Gaussian deconvolution analysis of PL spectrum of the ZnO QD/MgO/p-GaN heterojunction with the MgO interlay thickness of 24 nmBack to article page