Fig. 2
From: A Novel Nanofabrication Technique of Silicon-Based Nanostructures
SEM images of α-Si mask opening with 40-nm line width and 40-nm spacing. a The resist is patterned by e-beam lithography, and the bright area is the line. b α-Si nanofeatures are produced by a RIE process in ICP etcher by Cl2/HBr/O2 plasma chemistry. c Cross-sectional view of b shows a highly vertical and smooth etch profile with a superior etch uniformity