Fig. 4
From: A Novel Nanofabrication Technique of Silicon-Based Nanostructures
Top-down and cross-sectional SEM views of SiO2 trench nanostructures using newly developed cleaning process. a The SiO2 trench arrays fabricated show highly uniform and smooth characteristics on whole wafer surfaces. b Passivated films deposited on the trench sidewalls have been completely cleaned using the novel in situ plasma treatment. c Tilted view of b shows highly aligned and uniform arrays