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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Visible photoassisted room-temperature oxidizing gas-sensing behavior of Sn2S3 semiconductor sheets through facile thermal annealing

Fig. 4

a Dynamic electrical resistance variation curves of the Sn2S3 thin film on exposure to various NO2 gas concentrations (0.2–2.5 ppm) under light irradiation. b Dynamic electrical resistance variation curves of the Sn2S3–SnO2 thin film on exposure to various NO2 gas concentrations (0.2–2.5 ppm) under light irradiation. c Schematics of the Sn2S3–SnO2 thin film surface reaction with NO2 gas molecules and gas sensor device. d Cyclic gas-sensing response curves of the Sn2S3–SnO2 thin film on exposure to 0.2 ppm NO2 gas under light irradiation. e The gas-sensing responses of the Sn2S3–SnO2 thin film on exposure to various test gases

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