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Table 1 Phonon frequency shift ∆ω, biaxial strain σ, bandgap shift ∆E g , estimated bandgap E ′  g from phonon frequency shift, measured bandgap E g from PL peak position for the LT-20, LT-21, and LT-32 samples

From: Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

Sample ∆ω(cm− 1) σ(GPa) ∆E g (eV) E ′  g (eV) from Raman E g (eV) from PL peak
LT-20 1.75 0.28 5.91×10−3 3.39581 3.3926
LT-21 2.96 0.48 1.012×10−2 3.40012 3.4037
LT-32 1.46 0.23 4.85×10−3 3.39485 3.3912