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Table 1 Phonon frequency shift ∆ω, biaxial strain σ, bandgap shift ∆E g , estimated bandgap E ′  g from phonon frequency shift, measured bandgap E g from PL peak position for the LT-20, LT-21, and LT-32 samples

From: Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

Sample

∆ω(cm− 1)

σ(GPa)

∆E g (eV)

E ′  g (eV) from Raman

E g (eV) from PL peak

LT-20

1.75

0.28

5.91×10−3

3.39581

3.3926

LT-21

2.96

0.48

1.012×10−2

3.40012

3.4037

LT-32

1.46

0.23

4.85×10−3

3.39485

3.3912

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