Fig. 4From: Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate StructureTransfer characteristics of a ~3-nm-thick WSe2 flake, electrostatically doped to function as a an nFET (V SG > 0) and b pFET (V SG < 0). Note that the gate leakage current is always less than 10−12A; for clarity, it is not shown in a and b. c Device in TFET configurationBack to article page