Fig. 5
From: Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices
Temperature dependence of the ON-state resistance in Cu/ZrO2/Pt devices. a Schematic illustration of the test scheme with four-probe resistance measurement method. b Equivalent circuit of the crossbar structure and the configuration of the source measurement units (SMUs) in semiconductor parameter analyzer (Agilent B1500) with four-probe resistance measurement method. R Device is the ON-state resistance of the device region. The R 1, R 2, R 3, and R 4 are the equivalent resistances (line resistance and contact resistance) of the four pads, respectively. c–f Typical resistance-temperature characteristics of the ON-state resistances after P-Forming, N-Forming, N-SET1, and N-SET2 behaviors, respectively. The insets show the temperature coefficients of the four behaviors at a reference temperature T 0 = 303 K, respectively