Fig. 6
From: Fabrication and Optical Properties of Strain-free Self-assembled Mesoscopic GaAs Structures
a μ-PL spectrum of a single structure obtained in the energy range of the MGS-S (1.65 eV and 1.71 eV) at 10 K. Three distinguished features are identified and marked with 1, 2, and 3. The linewidth of the peak 1 is ca. 370 μeV. The inset shows the integrated PL peak intensity of the marked peaks as function of laser power. b Power dependence map for the spectral region shown in (a). The analysis of the marked peaks is depicted in the inset of (a). c Temperature dependence of the PL spectra. We can follow the energy shift of three bands: QW, MGS-S, and MGS-D. Continuous line curves mark the shift of the band gap following the Varshni formula with parameters for GaAs