Fig. 3
From: Observation of Anomalous Resistance Behavior in Bilayer Graphene
a Electrical resistance per square measurements of bilayer graphene as a function of temperature at the different magnetic field (B = 0~12 T). The results show that when the temperature increases from 2 to 340 K, the resistance of the bilayer graphene drops significantly. Indicating the bilayer graphene resistors have intrinsic semiconductor properties and magnetic field-induced high resistance behavior in bilayer graphene. Inset in a shows the relative resistance change under the condition of with and without magnetic field as a function of temperature. The symbols are the measured data, and the lines are fitted. b Schematic illustration of scattering mechanisms in bilayer graphene