Table 1 Material parameters used for InGaAs/InAlAs APD simulation [6, 8, 16, 17]
Parameters/InAlAs | Units | Electron | Hole |
|---|---|---|---|
SRH lifetime | s | 1 × 10−6 | 1 × 10−6 |
Radioactive coefficient | cm3 s−1 | 1.2 × 10−10 | 1.2 × 10−10 |
BBT coefficient α | 1 | 2 | 2 |
BBT coefficient A | 1/V cm s | 2.1 × 1011 | 2.2 × 106 |
BBT coefficient B | V/cm | 2.1 × 1011 | 2.2 × 106 |
Trap level E t | ev | 0.72 | |
Trap concentrations N t | cm−3 | 1 × 10−12 | |
m trap | m0 | 0.03 | |
Impact coefficient a | cm−1 | 1.3 × 107 | 3.3 × 107 |
Impact coefficient b | V/cm | 3.5 × 106 | 4.5 × 106 |