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Table 1 Material parameters used for InGaAs/InAlAs APD simulation [6, 8, 16, 17]

From: Optimization of InGaAs/InAlAs Avalanche Photodiodes

Parameters/InAlAs Units Electron Hole
SRH lifetime s 1 × 10−6 1 × 10−6
Radioactive coefficient cm3 s−1 1.2 × 10−10 1.2 × 10−10
BBT coefficient α 1 2 2
BBT coefficient A 1/V cm s 2.1 × 1011 2.2 × 106
BBT coefficient B V/cm 2.1 × 1011 2.2 × 106
Trap level E t ev 0.72  
Trap concentrations N t cm−3 1 × 10−12  
m trap m0 0.03  
Impact coefficient a cm−1 1.3 × 107 3.3 × 107
Impact coefficient b V/cm 3.5 × 106 4.5 × 106