Fig. 2From: Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer DepositionN 1 s photoelectron spectra of AlN/Si structures: a as-deposited, b annealed at 600 °C, c annealed at 700 °C, d annealed at 800 °C, and e annealed at 900 °C for 60 s in N2 ambientBack to article page