Fig. 5
The evolution of oxide thicknesses of Si/SiO2 NW arrays during the thermal oxidation process. (a) Experimental data of oxide thickness as a function of time compared with theoretical results calculated by the extended Deal-Grove oxidation model with different starting radius r 0 (139,100 nm) of Si NW under 1000° (symbols correspond to experimental points, solid curves correspond to the simulation results); (b) TEM image of individual Si/SiO2 composite NW and (c) SEM morphology of Si/SiO2 composite NW arrays after oxidation for 2.5 h at 1000° viewed from 45°