Fig. 1From: Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS TransistorsHRSEM micrographs showing cross section of samples (a) prior to SiGe SEG growth, (b) poor Si surface clean, (c) good Si surface clean and SiGe growth. (d) TEM cross section of sample b and (e) EDX mapping of sample b Back to article page