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  • Erratum
  • Open Access

Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition

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Nanoscale Research Letters201712:172

  • Received: 17 February 2017
  • Accepted: 17 February 2017
  • Published:

The original article was published in Nanoscale Research Letters 2017 12:63


The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here:

“This work was funded by National Key Basic Research Program of China (2015CB655005) and Science and Technology Commission of Shanghai Municipality Program (14DZ228090).”



Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (, which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors’ Affiliations

Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, Jingan District, 200070, People’s Republic of China
School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China
Department of Materials Science, Shanghai University, Shanghai, 200072, China


  1. (2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. Lett 12:63. doi:10.1186/s11671-017-1852-z


© The Author(s). 2017