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Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition

Erratum

The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here:

“This work was funded by National Key Basic Research Program of China (2015CB655005) and Science and Technology Commission of Shanghai Municipality Program (14DZ228090).”

Reference

  1. 1.

    (2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. Lett 12:63. doi:10.1186/s11671-017-1852-z

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Correspondence to Jianhua Zhang.

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The online version of the original article can be found under doi:10.1186/s11671-017-1852-z.

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Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Ding, X., Qin, C., Song, J. et al. Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition. Nanoscale Res Lett 12, 172 (2017). https://doi.org/10.1186/s11671-017-1927-x

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