Fig. 4From: Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based StructuresElement depth profiles in the Ge-ZrO2 sample grown with RFPGe = 1.1 W/cm2 obtained for as-deposited (a) and annealed at 800 °C (b) samplesBack to article page