Fig. 6From: ESR Study of (La,Ba)MnO3/ZnO Nanostructure for Resistive Switching Device H res2 vs θ H dependence for the LBMO/ZnO nanostructure (T = 160 K). Symbols denote experimental data; solid lines are the results of the fitting of experimental data with the use of Eqs. (5)–(6)Back to article page