Fig. 2From: Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness a The PL spectrum measured at 10 K with a laser intensity of 0.1 W/cm2 for the 7-nm QW, the 15-nm QW, the bulk InGaAs, and InAlAs reference samples; b the two-peak Gaussian fitting analysis for the PL spectrum of the 7-nm QW and the 15-nm QW to show the localized exciton emission and free exciton emissionBack to article page