Table 1 The extracted electrical parameters of bi-layer channel AZO/ZnO TFTs with different annealing treatments
From: Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
Annealing conditions | SS (V/dec) | I on/I off | V th (V) | μ (cm2/V.s) | I off (A) | N it (cm−2) |
|---|---|---|---|---|---|---|
No annealing | 0.5 | 2.4 × 107 | −1.2 | 0.6 | 2.9 × 10−13 | 3.18 × 1012 |
Dry O2 at 300 °C | 0.231 | 1.4 × 107 | −1.0 | 0.4 | 2.5 × 10−13 | 1.24 × 1012 |
Dry O2 at 250 °C | 0.226 | 0.6 × 107 | −0.8 | 0.1 | 2.3 × 10−13 | 1.2 × 1012 |
Dry O2:Ar = 3:3 at 350 °C | 0.166 | 0.6 × 107 | −0.4 | 0.01 | 1.0 × 10−14 | 0.77 × 1012 |