Fig. 1From: Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo SulfurizationPlane-view STEM image of a large-area MoS2 film synthesized on SiO2 by sulfurization of a predeposited (sputtered) Mo layer at 800 °C in H2S (100 mbar; 30 min) exposing a uniform polycrystalline film of average grain size ~20 nm; The zoomed in picture shows the hexagonal structure and trigonal prismatic atomic arrangement geometryBack to article page