Fig. 1From: Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications(Color online) a The schematic diagram of the nominated Al2O3/TiO2/Al2O3 charge-trapping memory device structure. b The schematic diagram of the charge-trapping memory device structure after 900 °C annealing. c The HRTEM cross-sectional image of the actual charge-trapping memory device used in our workBack to article page