Fig. 4From: Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications(Color online) a Valance band spectra of P-Si substrate, SiO2/Si, TiAlO/SiO2/Si, and Al2O3/SiO2/Si structure. b O 1 s electron energy loss spectra of SiO2/Si, TiAlO/SiO2/Si, and Al2O3/SiO2/Si structure. c A schematic diagram of the band alignments of the Al2O3-TiAlO-SiO2-Silicon structureBack to article page