Fig. 6From: Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications(Color online) a Charge-trapping characteristics of the Au/TiAlO/SiO2/Si structure under constant current stress of 1 μA/cm2. b A schematic diagram of the charge trap centroid (X cent) of the TiAlO filmBack to article page