Fig. 4From: Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy a-d are SEM images of 0.6, 1.0, 1.5 and 2.0 nm Au film deposited by e-gun, respectively, then annealed at 580 °C for 10 min to study the influence of Au thickness in GaAs NWs growth. Ga flux is 1.0×10-7 Torr and As flux is 2.5×10-6 Torr and grown at 540 °C for 15 minBack to article page