Fig. 3
From: In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
UPS measurement. a UPS of TiN. b UPS of 2-nm HfO2 on TiN
Fig. 3 | Nanoscale Research Letters
From: In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO2/TiN Structure for CMOS Applications
UPS measurement. a UPS of TiN. b UPS of 2-nm HfO2 on TiN