Fig. 4From: AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer DepositionXPS spectroscopy of Ga 3d peak at the interface between AlN and AlGaN for HEMTs without (Upper) and with (under) plasma pre-treatment. The spectrum was fitted by Gaussian function and separated by four major components (solid lines) corresponding to Ga-Ga (blue), Ga2O (green), Ga-N (black), and Ga2O3 (red)Back to article page