Fig. 5From: AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition a Temperature dependent I DS-V GS of plasma pre-treated HEMT. The inset shows the current collapse with increased temperature. b The temperature dependent BV measurement of plasma pre-treated HEMT. The void lines show the temperature dependent I GS of plasma pre-treated HEMTBack to article page